Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

• Main Authors: Mohamed, Mohd Ambri, Tien Lam, Pham, Bae, K. W., Otsuka, Nobuo
• Format: Article
• Language: English
• Published: American Institute of Physics Inc. 2011
• Subjects: QC Physics; QD Chemistry; TK7885 Computer engineering
• Online Access: http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf; http://irep.iium.edu.my/29874/; http://jap.aip.org/resource/1/japiau/v110/i12/p123716_s1

Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower...