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Design of a low noise amplifier with GaAs MESFET at Ku-Band

Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.

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Bibliographic Details
Main Authors: Islam, Md. Rafiqul, Alam, A. H. M. Zahirul, Khan, Sheroz, Shabana, Arafat A. A
Format: Conference or Workshop Item
Language:English
Published: IEEE 2010
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/1632/1/05556786.pdf
http://irep.iium.edu.my/1632/
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5556786&tag=1
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spelling my.iium.irep.16322017-08-02T08:38:17Z http://irep.iium.edu.my/1632/ Design of a low noise amplifier with GaAs MESFET at Ku-Band Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A TK Electrical engineering. Electronics Nuclear engineering Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz. IEEE 2010 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/1632/1/05556786.pdf Islam, Md. Rafiqul and Alam, A. H. M. Zahirul and Khan, Sheroz and Shabana, Arafat A. A (2010) Design of a low noise amplifier with GaAs MESFET at Ku-Band. In: International Conference on Computer and Communication Engineering (ICCCE 2010), 11-13 May 2010, Kuala Lumpur. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5556786&tag=1
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
Design of a low noise amplifier with GaAs MESFET at Ku-Band
description Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.
format Conference or Workshop Item
author Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
author_facet Islam, Md. Rafiqul
Alam, A. H. M. Zahirul
Khan, Sheroz
Shabana, Arafat A. A
author_sort Islam, Md. Rafiqul
title Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_short Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_full Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_fullStr Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_full_unstemmed Design of a low noise amplifier with GaAs MESFET at Ku-Band
title_sort design of a low noise amplifier with gaas mesfet at ku-band
publisher IEEE
publishDate 2010
url http://irep.iium.edu.my/1632/1/05556786.pdf
http://irep.iium.edu.my/1632/
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5556786&tag=1
_version_ 1643604825786548224
score 13.18916

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