Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

• Main Authors: Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Daud, Suzairi, Abdul Kadir@Jaafar, Muhammad Zamzuri
• Format: Article
• Language: English; English
• Published: IOP Publishing 2024
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/114024/7/114024_Low%20parasitic%20carrier%20reservoir.pdf; http://irep.iium.edu.my/114024/8/114024_Low%20parasitic%20carrier%20reservoir_Scopus.pdf; http://irep.iium.edu.my/114024/; https://iopscience.iop.org/article/10.1088/1402-4896/ad3adf; https://doi.org/10.1088/1402-4896/ad3adf

Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric f...