EFFECTS OF CHANNEL LENGTH VARIATION ON TRANSCONDUCTANCE N-CHANNEL MOSFET

• Main Author: BAKHTIAR JAMILI, MUHAMAD AZWAN BIN
• Format: Final Year Project
• Language: English
• Published: Universiti Teknologi PETRONAS 2012
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://utpedia.utp.edu.my/4037/1/11794_FinRep.pdf; http://utpedia.utp.edu.my/4037/

Improvement in MOSFET size has been done throughout the years since the development of first MOSFET. However, there are some reliability issues regarding the channel-length of MOSFET. There is a need to identify the causes of these issues, in order to help the designer improve MOSFET design further. Thus, in this project, research will be done to study the effect of channel-length variation on MOSFET transconductance property. The background of the project will include problem statement to justify the study, objectives, scope of study, relevance and feasibility study. Literature review of MOSFET will cover aspects such as the effects of channel-length variation, threshold voltages shift and also transconductance. An in depth research will attempt to determine a method suitable to be performed in this project. The methodology for this project will be discussed further.