Performance Analysis of Silicon Schottky Diode Family in DC-DC Converter Using Circuit Simulator
The unipolar-based devices, silicon schottky (SiS) and silicon carbide schottky (SiCS) power diodes are investigated for their reverse recovery transient responses and the effects on the turn-on losses of the switching MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are si...
Saved in:
Main Authors: | Yahaya, Nor Zaihar, ramle, fairuz hanisah |
---|---|
Format: | Article |
Published: |
2009
|
Subjects: | |
Online Access: | http://eprints.utp.edu.my/4394/1/Paper_%5B14%5D.pdf http://eprints.utp.edu.my/4394/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter
by: Yahaya, Nor Zaihar, et al.
Published: (2010) -
Comparative Assessment of Si Schottky Diode Family in DC-DC Converter
by: Yahaya, Nor Zaihar
Published: (2011) -
Performance analysis of si schottky diode family in DC-DC converter
by: N.Z., Yahaya, et al.
Published: (2009) -
Performance Analysis Of Carbide Element in DC-DC Converter
by: RAMLE, FAIRUZ HANISAH
Published: (2007) -
The Study of MOSFET Parallelism in High Frequency
DC/DC Converter
by: Yahaya, Nor Zaihar
Published: (2012)