Evaluation of sneak path current in self-rectifying memristor crossbar

Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossb...

Full description

Saved in:
Bibliographic Details
Main Author: Goh, Hui Ying
Format: Thesis
Language:English
Published: 2022
Subjects:
Online Access:http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf
http://eprints.utm.my/id/eprint/99387/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149899
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utm.99387
record_format eprints
spelling my.utm.993872023-02-27T03:05:50Z http://eprints.utm.my/id/eprint/99387/ Evaluation of sneak path current in self-rectifying memristor crossbar Goh, Hui Ying TK Electrical engineering. Electronics Nuclear engineering Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossbar array circuit, there is limitation related to undesired sneak path current. Utilizing a self-rectifying memristor is reported to minimize the effect of the sneak path issue. Since there is lack of resources on research of implementing self-rectifying memristor in crossbar array structure, it is the focus of this project. The objective of this project is to model and simulate self-rectifying memristor with different rectification ratio and non-linearity. Their effect on the performance of memristor in crossbar array structure is then analyzed. Several types of self-rectifying memristor are reviewed and their compact SPICE models are generated. The memristor SPICE model is used to build a crossbar array circuit and run simulation through LTSPICE software. Moreover, comparison between Knowm memristor and self-rectifying memristor is done by observing their current-voltage relationship. The reduction of sneak path current by using different value of saturation current in self-rectifying memristor is evaluated and the effect of rectification ratio and non-linearity is being studied. Based on the simulation result, low saturation current helps to ensure large rectification ratio and non-linearity to lower sneak path current in the circuit. In short, self-rectifying memristor is able to effectively suppress sneak path current in crossbar array. 2022 Thesis NonPeerReviewed application/pdf en http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf Goh, Hui Ying (2022) Evaluation of sneak path current in self-rectifying memristor crossbar. Masters thesis, Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering. http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149899
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Goh, Hui Ying
Evaluation of sneak path current in self-rectifying memristor crossbar
description Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossbar array circuit, there is limitation related to undesired sneak path current. Utilizing a self-rectifying memristor is reported to minimize the effect of the sneak path issue. Since there is lack of resources on research of implementing self-rectifying memristor in crossbar array structure, it is the focus of this project. The objective of this project is to model and simulate self-rectifying memristor with different rectification ratio and non-linearity. Their effect on the performance of memristor in crossbar array structure is then analyzed. Several types of self-rectifying memristor are reviewed and their compact SPICE models are generated. The memristor SPICE model is used to build a crossbar array circuit and run simulation through LTSPICE software. Moreover, comparison between Knowm memristor and self-rectifying memristor is done by observing their current-voltage relationship. The reduction of sneak path current by using different value of saturation current in self-rectifying memristor is evaluated and the effect of rectification ratio and non-linearity is being studied. Based on the simulation result, low saturation current helps to ensure large rectification ratio and non-linearity to lower sneak path current in the circuit. In short, self-rectifying memristor is able to effectively suppress sneak path current in crossbar array.
format Thesis
author Goh, Hui Ying
author_facet Goh, Hui Ying
author_sort Goh, Hui Ying
title Evaluation of sneak path current in self-rectifying memristor crossbar
title_short Evaluation of sneak path current in self-rectifying memristor crossbar
title_full Evaluation of sneak path current in self-rectifying memristor crossbar
title_fullStr Evaluation of sneak path current in self-rectifying memristor crossbar
title_full_unstemmed Evaluation of sneak path current in self-rectifying memristor crossbar
title_sort evaluation of sneak path current in self-rectifying memristor crossbar
publishDate 2022
url http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf
http://eprints.utm.my/id/eprint/99387/
http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149899
_version_ 1758950354603474944
score 13.160551