Practical route for the low-temperature growth of large-area bilayer graphene on polycrystalline nickel by cold-wall chemical vapor deposition

• Main Authors: Mohammad Haniff, Muhammad Aniq Shazni, Zainal Ariffin, Nur Hamizah, Ooi, Poh Choon, Mohd. Razip Wee, Mohd. Farhanulhakim, Mohamed, Mohd. Ambri, Hamzah, Azrul Azlan, Syono, Mohd. Ismahadi, Hashim, Abdul Manaf
• Format: Article
• Published: American Chemical Society 2021
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/95319/; http://dx.doi.org/10.1021/acsomega.1c00841

We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, highresolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.