Practical route for the low-temperature growth of large-area bilayer graphene on polycrystalline nickel by cold-wall chemical vapor deposition
We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni...
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Main Authors: | , , , , , , , |
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Format: | Article |
Published: |
American Chemical Society
2021
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/95319/ http://dx.doi.org/10.1021/acsomega.1c00841 |
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Summary: | We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, highresolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics. |
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