Device performance of silicene nanoribbon field-effect transistor under ballistic transport

Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...

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Main Authors: Chuan, Mu Wen, Wong, Kien Liong, Hamzah, Afiq, Rusli, Shahrizal, Alias, Nurul Ezaila, Lim, Cheng Siong, Tan, Michael Loong Peng
Format: Conference or Workshop Item
Published: 2020
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Online Access:http://eprints.utm.my/id/eprint/94134/
http://dx.doi.org/10.1109/ICSE49846.2020.9166895
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spelling my.utm.941342022-02-28T13:24:19Z http://eprints.utm.my/id/eprint/94134/ Device performance of silicene nanoribbon field-effect transistor under ballistic transport Chuan, Mu Wen Wong, Kien Liong Hamzah, Afiq Rusli, Shahrizal Alias, Nurul Ezaila Lim, Cheng Siong Tan, Michael Loong Peng TK Electrical engineering. Electronics Nuclear engineering Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 105, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications. 2020 Conference or Workshop Item PeerReviewed Chuan, Mu Wen and Wong, Kien Liong and Hamzah, Afiq and Rusli, Shahrizal and Alias, Nurul Ezaila and Lim, Cheng Siong and Tan, Michael Loong Peng (2020) Device performance of silicene nanoribbon field-effect transistor under ballistic transport. In: 14th IEEE International Conference on Semiconductor Electronics, ICSE 2020, 28 - 29 July 2020, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/ICSE49846.2020.9166895
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Chuan, Mu Wen
Wong, Kien Liong
Hamzah, Afiq
Rusli, Shahrizal
Alias, Nurul Ezaila
Lim, Cheng Siong
Tan, Michael Loong Peng
Device performance of silicene nanoribbon field-effect transistor under ballistic transport
description Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 105, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications.
format Conference or Workshop Item
author Chuan, Mu Wen
Wong, Kien Liong
Hamzah, Afiq
Rusli, Shahrizal
Alias, Nurul Ezaila
Lim, Cheng Siong
Tan, Michael Loong Peng
author_facet Chuan, Mu Wen
Wong, Kien Liong
Hamzah, Afiq
Rusli, Shahrizal
Alias, Nurul Ezaila
Lim, Cheng Siong
Tan, Michael Loong Peng
author_sort Chuan, Mu Wen
title Device performance of silicene nanoribbon field-effect transistor under ballistic transport
title_short Device performance of silicene nanoribbon field-effect transistor under ballistic transport
title_full Device performance of silicene nanoribbon field-effect transistor under ballistic transport
title_fullStr Device performance of silicene nanoribbon field-effect transistor under ballistic transport
title_full_unstemmed Device performance of silicene nanoribbon field-effect transistor under ballistic transport
title_sort device performance of silicene nanoribbon field-effect transistor under ballistic transport
publishDate 2020
url http://eprints.utm.my/id/eprint/94134/
http://dx.doi.org/10.1109/ICSE49846.2020.9166895
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score 13.222552