Properties of rapid thermal oxidized p-type germanium and its metal-oxide-semiconductor capacitor structure
In this study, p-type Ge surface was oxidized using a rapid thermal technique at temperatures of 380°C, 400°C, 450°C and 500°C, and annealing time of 5 min, 10 min and 15 min in oxygen (O2) with fixed flow rate of 1.0 l/min. It was found that the surface roughness of germanium oxide (GeOx) decreases...
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Main Authors: | , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2019
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Online Access: | http://eprints.utm.my/id/eprint/89652/1/NoraniAbManaf2019_PropertiesofRapidThermalOxidized.pdf http://eprints.utm.my/id/eprint/89652/ http://dx.doi.org/10.1016/j.matpr.2018.12.070 |
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