Real space multigrid method for ballistic carbon nanotubes field-effect transistor
This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbo...
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my.utm.854672020-06-30T08:45:48Z http://eprints.utm.my/id/eprint/85467/ Real space multigrid method for ballistic carbon nanotubes field-effect transistor Ha, Cheun Yuen Yeak, Su Hoe Tan, Michael Loong Peng Q Science (General) This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbon nanotubes (CNTs). In this research, we explored and compared the performance of CNTFET in simulation time with different size of grid points (101 × 101 until 701 × 701). This enables an efficient calculation of quantum transport properties, which relies on the Poisson equation matrices in real space approach. The comparison results show that the multigrid technique requires less computational time, by up to 54% without the Jacobian matrix and 4% with the Jacobian matrix. American Scientific Publishers 2018-09 Article PeerReviewed Ha, Cheun Yuen and Yeak, Su Hoe and Tan, Michael Loong Peng (2018) Real space multigrid method for ballistic carbon nanotubes field-effect transistor. Journal of Nanoelectronics and Optoelectronics, 13 (9). pp. 1284-1289. ISSN 1555-130X http://dx.doi.org/10.1166/jno.2018.2368 DOI:10.1166/jno.2018.2368 |
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Q Science (General) Ha, Cheun Yuen Yeak, Su Hoe Tan, Michael Loong Peng Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
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This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbon nanotubes (CNTs). In this research, we explored and compared the performance of CNTFET in simulation time with different size of grid points (101 × 101 until 701 × 701). This enables an efficient calculation of quantum transport properties, which relies on the Poisson equation matrices in real space approach. The comparison results show that the multigrid technique requires less computational time, by up to 54% without the Jacobian matrix and 4% with the Jacobian matrix. |
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Article |
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Ha, Cheun Yuen Yeak, Su Hoe Tan, Michael Loong Peng |
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Ha, Cheun Yuen Yeak, Su Hoe Tan, Michael Loong Peng |
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Ha, Cheun Yuen |
title |
Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
title_short |
Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
title_full |
Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
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Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
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Real space multigrid method for ballistic carbon nanotubes field-effect transistor |
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real space multigrid method for ballistic carbon nanotubes field-effect transistor |
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American Scientific Publishers |
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2018 |
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http://eprints.utm.my/id/eprint/85467/ http://dx.doi.org/10.1166/jno.2018.2368 |
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