Temperature analysis of ZnO/p-Si heterojunction using thermionic emission model
Two ZnO/p-Si heterojunction diode structures are modeled based on thermionic emission in numerical computation environment, and their current-voltage characteristics were validated in Spice with 500 Ω and 5 kΩ load resistance. Both structures are differentiated based on thickness, metal size, and do...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Science Publishing Corporation Inc.
2018
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/85218/1/SMSultan2018_TemperatureAnalysisofZnOpSiHeterojunctionUsing.pdf http://eprints.utm.my/id/eprint/85218/ https://www.sciencepubco.com/index.php/ijet/article/view/21533 |
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