Comments: Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering

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Bibliographic Details
Main Authors:	Alias, Nurul Ezaila, Zainal Abidin, Mastura Shafinaz
Format:	Conference or Workshop Item
Published:	2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/83565/
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