Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
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my.utm.835652019-10-21T04:11:15Z http://eprints.utm.my/id/eprint/83565/ Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering Alias, Nurul Ezaila Zainal Abidin, Mastura Shafinaz TK Electrical engineering. Electronics Nuclear engineering 2018 Conference or Workshop Item PeerReviewed Alias, Nurul Ezaila and Zainal Abidin, Mastura Shafinaz (2018) Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering. In: 3RD INTERNATIONAL CONFERENCE ON EElectrical, Electronic, Communication and Control Engineering (ICEECC 2018), 2018. |
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TK Electrical engineering. Electronics Nuclear engineering Alias, Nurul Ezaila Zainal Abidin, Mastura Shafinaz Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
format |
Conference or Workshop Item |
author |
Alias, Nurul Ezaila Zainal Abidin, Mastura Shafinaz |
author_facet |
Alias, Nurul Ezaila Zainal Abidin, Mastura Shafinaz |
author_sort |
Alias, Nurul Ezaila |
title |
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
title_short |
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
title_full |
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
title_fullStr |
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
title_full_unstemmed |
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
title_sort |
graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering |
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2018 |
url |
http://eprints.utm.my/id/eprint/83565/ |
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1651866722085371904 |
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13.211869 |