Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering

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Main Authors: Alias, Nurul Ezaila, Zainal Abidin, Mastura Shafinaz
Format: Conference or Workshop Item
Published: 2018
Subjects:
Online Access:http://eprints.utm.my/id/eprint/83565/
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spelling my.utm.835652019-10-21T04:11:15Z http://eprints.utm.my/id/eprint/83565/ Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering Alias, Nurul Ezaila Zainal Abidin, Mastura Shafinaz TK Electrical engineering. Electronics Nuclear engineering 2018 Conference or Workshop Item PeerReviewed Alias, Nurul Ezaila and Zainal Abidin, Mastura Shafinaz (2018) Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering. In: 3RD INTERNATIONAL CONFERENCE ON EElectrical, Electronic, Communication and Control Engineering (ICEECC 2018), 2018.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Alias, Nurul Ezaila
Zainal Abidin, Mastura Shafinaz
Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
format Conference or Workshop Item
author Alias, Nurul Ezaila
Zainal Abidin, Mastura Shafinaz
author_facet Alias, Nurul Ezaila
Zainal Abidin, Mastura Shafinaz
author_sort Alias, Nurul Ezaila
title Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
title_short Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
title_full Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
title_fullStr Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
title_full_unstemmed Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
title_sort graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering
publishDate 2018
url http://eprints.utm.my/id/eprint/83565/
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score 13.211869