Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature

• Main Authors: Khadem Hosseini, V., Ahmadi, M. T., Ismail, R.
• Format: Article
• Published: Springer New York LLC 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/80884/; http://dx.doi.org/10.1007/s11664-018-6366-7

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.