Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature
The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based...
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| Main Authors: | , , |
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| Format: | Article |
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Springer New York LLC
2017
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/80884/ http://dx.doi.org/10.1007/s11664-018-6366-7 |
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