The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures

In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quantum dots characterization. BEEM is a new characterization technique by using electrons ejected from the scanning tunneling microscopy (STM) tip to investigate the metal-semiconductor interfaces. Becau...

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Bibliographic Details
Main Authors: Hutagalung, Sabar D., Yaacob, Khatijah A., Sakrani, Samsudi, Mat Isa, Ahmad R.
Format: Conference or Workshop Item
Language:English
Published: 2006
Subjects:
Online Access:http://eprints.utm.my/id/eprint/7792/1/Samsudi_Bin_Sakrani_2006_The_Development_Of_BEEM_Modelling.pdf
http://eprints.utm.my/id/eprint/7792/
http://dx.doi.org/10.1109/NANOEL.2006.1609735
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