Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation
A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and...
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2017
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my.utm.764292018-04-30T13:21:24Z http://eprints.utm.my/id/eprint/76429/ Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation Hossain, I. Wagiran, H. Sahini, M. H. QC Physics A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and TLD-100 chips were placed inside Perspex and irradiated with 1.25 MeV gamma photons with doses ranging from 1.0 to 10.00 Gy. The results clearly show the superiority of TLD-100 chips in terms of response and sensitivity. The sensitivity of Yb–Tb-doped optical fiber and TLD-100 chips is 45.25 and 768.85 nc/(mg × Gy) respectively. Springer New York LLC 2017 Article PeerReviewed Hossain, I. and Wagiran, H. and Sahini, M. H. (2017) Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. Journal of Applied Spectroscopy, 84 (1). pp. 144-147. ISSN 0021-9037 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017441667&doi=10.1007%2fs10812-017-0442-2&partnerID=40&md5=59e4e7fb4283d179cad12d6105a679d1 DOI:10.1007/s10812-017-0442-2 |
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QC Physics Hossain, I. Wagiran, H. Sahini, M. H. Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
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A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and TLD-100 chips were placed inside Perspex and irradiated with 1.25 MeV gamma photons with doses ranging from 1.0 to 10.00 Gy. The results clearly show the superiority of TLD-100 chips in terms of response and sensitivity. The sensitivity of Yb–Tb-doped optical fiber and TLD-100 chips is 45.25 and 768.85 nc/(mg × Gy) respectively. |
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Article |
author |
Hossain, I. Wagiran, H. Sahini, M. H. |
author_facet |
Hossain, I. Wagiran, H. Sahini, M. H. |
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Hossain, I. |
title |
Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
title_short |
Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
title_full |
Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
title_fullStr |
Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
title_full_unstemmed |
Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation |
title_sort |
thermoluminescence properties of yb–tb-doped sio2 optical fiber subjected to 1.25 mev gamma radiation |
publisher |
Springer New York LLC |
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2017 |
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http://eprints.utm.my/id/eprint/76429/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017441667&doi=10.1007%2fs10812-017-0442-2&partnerID=40&md5=59e4e7fb4283d179cad12d6105a679d1 |
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13.160551 |