Thermoluminescence properties of Yb–Tb-Doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation
A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and...
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Format: | Article |
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Springer New York LLC
2017
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Online Access: | http://eprints.utm.my/id/eprint/76429/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017441667&doi=10.1007%2fs10812-017-0442-2&partnerID=40&md5=59e4e7fb4283d179cad12d6105a679d1 |
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Summary: | A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and TLD-100 chips were placed inside Perspex and irradiated with 1.25 MeV gamma photons with doses ranging from 1.0 to 10.00 Gy. The results clearly show the superiority of TLD-100 chips in terms of response and sensitivity. The sensitivity of Yb–Tb-doped optical fiber and TLD-100 chips is 45.25 and 768.85 nc/(mg × Gy) respectively. |
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