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Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...

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Main Authors: Hashim, Abdul Manaf, Kasai, Seiya, Lizuki, Kouichi, Hashizume, Tamotsu, Hasegawa, Hideki
Format: Conference or Workshop Item
Published: 2007
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7628/
http://dx.doi.org/10.1063/1.2739849
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spelling my.utm.76282017-08-01T06:46:23Z http://eprints.utm.my/id/eprint/7628/ Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers Hashim, Abdul Manaf Kasai, Seiya Lizuki, Kouichi Hashizume, Tamotsu Hasegawa, Hideki TK Electrical engineering. Electronics Nuclear engineering Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. 2007 Conference or Workshop Item PeerReviewed Hashim, Abdul Manaf and Kasai, Seiya and Lizuki, Kouichi and Hashizume, Tamotsu and Hasegawa, Hideki (2007) Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers. In: AIP Conference Proceedings, 04 - 06th Sept. 2006, Kuala Terengganu, Malaysia. http://dx.doi.org/10.1063/1.2739849
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul Manaf
Kasai, Seiya
Lizuki, Kouichi
Hashizume, Tamotsu
Hasegawa, Hideki
Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
description Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions.
format Conference or Workshop Item
author Hashim, Abdul Manaf
Kasai, Seiya
Lizuki, Kouichi
Hashizume, Tamotsu
Hasegawa, Hideki
author_facet Hashim, Abdul Manaf
Kasai, Seiya
Lizuki, Kouichi
Hashizume, Tamotsu
Hasegawa, Hideki
author_sort Hashim, Abdul Manaf
title Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
title_short Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
title_full Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
title_fullStr Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
title_full_unstemmed Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
title_sort design, fabrication and characterization of gaas-based interdigital-gated hemt devices for solid-state thz wave amplifiers
publishDate 2007
url http://eprints.utm.my/id/eprint/7628/
http://dx.doi.org/10.1063/1.2739849
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score 13.15806

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