Band gap engineering of BC2N for nanoelectronic applications
The BC2N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2N is carried out based on the schematic structure o...
Saved in:
Main Authors: | Lim, W. H., Hamzah, A., Ahmadi, M. T., Ismail, R. |
---|---|
Format: | Article |
Published: |
Academic Press
2017
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/75646/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85030760717&doi=10.1016%2fj.spmi.2017.09.040&partnerID=40&md5=04d0cb0d7112af43ec338f193ffef34e |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Performance analysis of one dimensional BC2N for nanoelectronics applications
by: Lim, Wei Hong, et al.
Published: (2018) -
Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications
by: Chuan, M. W., et al.
Published: (2021) -
Band gap engineering of carbon allotropes
by: Arora, Vijay Kumar
Published: (2014) -
Theoretical study of transport properties of nanoelectronics for sensor application
by: Ijeomah, Geoffrey Ugochukwu
Published: (2018) -
Nanoelectronic Engineering
by: Universiti Malaysia Perlis (UniMAP)
Published: (2019)