Band gap engineering of BC2N for nanoelectronic applications

• Main Authors: Lim, W. H., Hamzah, A., Ahmadi, M. T., Ismail, R.
• Format: Article
• Published: Academic Press 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/75646/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85030760717&doi=10.1016%2fj.spmi.2017.09.040&partnerID=40&md5=04d0cb0d7112af43ec338f193ffef34e

The BC2N as an example of boron-carbon-nitride (BCN), has the analogous structure as the graphene and boron nitride. It is predicted to have controllable electronic properties. Therefore, the analytical study on the engineer-able band gap of the BC2N is carried out based on the schematic structure of BC2N. The Nearest Neighbour Tight Binding (NNTB) model is employed with the dispersion relation and the density of state (DOS) as the main band gap analysing parameter. The results show that the hopping integrals having the significant effect on the band gap, band structure and DOS of BC2N nanowire (BC2NNW) need to be taken into consideration. The presented model indicates consistent trends with the published computational results around the Dirac points with the extracted band gap of 0.12 eV. Also, it is distinguished that wide energy gap of boron nitride (BN) is successfully narrowed by this carbon doped material which assures the application of BC2N on the nanoelectronics and optoelectronics in the near future.