Selective aspect ratio of CNTs based on annealing temperature by TCVD method

• Main Authors: Yousefi, A. T., Mahmood, M. R., Ikeda, S.
• Format: Conference or Workshop Item
• Published: American Institute of Physics Inc. 2016
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/73165/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984587038&doi=10.1063%2f1.4948855&partnerID=40&md5=25090315c5a597011560083a6c609bb5

Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature.