Performance prediction of graphene nanoscroll and carbon nanotube transistors

• Main Authors: Hamzah, A., Ismail, R.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73078/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84990990618&doi=10.1109%2fSMELEC.2016.7573613&partnerID=40&md5=600545e00a31beddcc7397d32d963975

The CNT has been the counterpart to the GNS due to their long tubular structure as both exhibit practically similar 1D carrier transport and expected to have MOSFET-like behaviour. Therefore, it is crucial to distinguish the distinct features between those two structures. The performance was assessed at full potential by assuming that both devices exhibit a perfect ohmic contact and operated in quantum conductance limit. The gate capacitance of GNSFET was found to be slightly lower than the CNTFET since both structures applied the same concept of electrostatic capacitance. But Simulation results indicate that GNSFET can produce comparable performances as the CNTFET.