Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

• Main Authors: Chin, H. C., Tan, M. L. P.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73073/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991813359&doi=10.1109%2fUKSim.2015.10&partnerID=40&md5=69a974e22258f1cef29b15dc2eb0bb89

The effects of acoustic and optical phonon scattering on the electrical transport characteristic of carbon nanotube (CNT) and silicon nanowire (Si NW) field-effect transistors (FETs) are examined using the top of the barrier model. The phonon scattering effects are incorporated into the device model...