Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode

• المؤلفون الرئيسيون: Lim, L. W., Aziz, F., Muhammad, F. F., Supangat, A., Sulaiman, K.
• التنسيق: مقال
• منشور في: Elsevier Ltd 2016
• الموضوعات: TJ Mechanical engineering and machinery
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/71784/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994299988&doi=10.1016%2fj.synthmet.2016.08.018&partnerID=40&md5=73c31e85d5d848c00397b930a0ecf4d9

In the present study, poly{4,8-bis[5-(2-ethylhexyl)thiophen-2-yl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7-Th) was used to fabricate a novel Al/PTB7-Th/n-Si metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD)...