Junction formation with HWCVD and TCAD model of an epitaxial back contact solar cell

• Main Authors: Rahman, T., Nawabjan, A., Tarazona, A., Bagnall, D. M., Boden, S. A.
• Format: Article
• Published: IEEE Electron Devices Society 2016
• Subjects: QA75 Electronic computers. Computer science
• Online Access: http://eprints.utm.my/id/eprint/71776/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994765324&doi=10.1109%2fJPHOTOV.2016.2598277&partnerID=40&md5=00511d5cbd0c57b61972aa83d59db479

In this paper, we present morphological and electrical characteristics of a junction formed of Si p-type films deposited on an n-type silicon wafer using a hot wire chemical vapor deposition (HWCVD) tool. We describe the fabrication process and study the influence of diborane flow and postprocess an...