Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate

• Main Authors: Jesbains, K., Kuwano, Noriyuki, Jamaludin, Khairur Rijal, Miyake, Hideto, Hiramatsu, Kazumasa, Suzuki, Shuhei, Mitsuhara, Masatoshi, Hata, S., Soejima, Youhei
• Format: Article
• Language: English
• Published: Universiti Malaysia Pahang 2016
• Subjects: T Technology (General)
• Online Access: http://eprints.utm.my/id/eprint/70385/1/KhairurRijalJamaludin2016_Reductionofdislocationdensity.pdf; http://eprints.utm.my/id/eprint/70385/; http://dx.doi.org/10.15282/jmes.10.1.2016.14.0182

An aluminium nitride (AlN) buffer layer with 200 nm thickness was grown on (0001) sapphire substrate using the metal-organic vapour phase epitaxy (MOVPE) method in a low-pressure furnace, followed by a clean-up treatment of sapphire substrate at 1100°C. Thereafter, the AlN buffer layer was annealed...