Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: synthesis, structural characterization and photoluminescence
Vertically aligned silicon nanowires (SiNWs) have been successfully synthesized using pure silane gas as a precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of the growth temperature on the morphology, structure and photoluminescence properties...
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Main Authors: | , , |
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Format: | Article |
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Elsevier
2014
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/63213/ http://dx.doi.org/10.1016/j.mssp.2014.06.018 |
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Summary: | Vertically aligned silicon nanowires (SiNWs) have been successfully synthesized using pure silane gas as a precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of the growth temperature on the morphology, structure and photoluminescence properties of SiNWs has been studied. The SiNWs were needle-liked materials with the length of a few microns having the diameters of tens of nanometers near the bottom and a few nanometers at the top. Thinner nanowires have been obtained at the higher growth temperature process. High resolution transmission electron microscopy confirms that the nanowires are composed of a crystalline silicon core with an oxide shell. The PL spectrum of the Si nanoneedles have shown two emission bands around 450 nm and ∼750, which originate from the defects related to oxygen fault in the oxide shell and interfaces between the crystalline Si core and the oxide shell, respectively. |
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