Quantum confinement effect on trilayer graphene nanoribbon carrier concentration

• Main Authors: Ismail, Razali, Rahmani, Meisam, Ahmadi, M. T., Ghadiry, M. H.
• Format: Article
• Published: Taylor & Francis Ltd 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/62379/; http://dx.doi.org/10.1080/17458080.2013.794309

In this study, one-dimensional vision of carrier movement based on the band structure of trilayer graphene nanoribbon in the presence of a perpendicular electric field is employed. An analytical model of ABA-stacked trilayer graphene nanoribbon carrier statistics as a fundamental parameter of field effect transistor (FET) in corporation with a numerical solution is presented in the degenerate and non-degenerate limits. The simulated results based on the presented model indicate that the model can be approximated by degenerate and non-degenerate approximations in some numbers of normalised Fermi energy. Analytical model specifies that carrier concentration in degenerate limit is strongly independent of normalised Fermi energy; however, in the non-degenerate limit, it is a strong function of normalised Fermi energy. The proposed model is then compared with other types of graphene. As a result, the developed model can assist in comprehending experiments involving trilayer graphene nanoribbon FET-based devices.