Room-temperature growth of ion-induced Si- and Ge-incorporated carbon nanofibers
We have demonstrated the fabrication of Si- and Ge-incorporated carbon nanofibers (CNFs) at room temperature. Graphite foil surfaces were irradiated by Ar+ and Ne+ ions with simultaneous Si and Ge supply, and the dependences of the ion-induced composite CNFs surface morphology on the ion species and...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Wiley-VCH Verlag
2015
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/55357/ http://dx.doi.org/10.1002/pssb.201451660 |
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| Summary: | We have demonstrated the fabrication of Si- and Ge-incorporated carbon nanofibers (CNFs) at room temperature. Graphite foil surfaces were irradiated by Ar+ and Ne+ ions with simultaneous Si and Ge supply, and the dependences of the ion-induced composite CNFs surface morphology on the ion species and type of incorporated materials were investigated. The sample surfaces were characterized by various kinds of densely distributed nanostructures, such as conical protrusions, nanoneedles, nanocones, and CNF-tipped cones, depending on the Si and Ge supply rates during ion irradiation. In addition, Ne+ irradiation yielded longer CNFs compared to Ar+-irradiated CNFs. Thus, the nanostructures growth was controllable by adjusting the ion and material species. Surface morphology of ion-induced Ge-incorporated CNFs. |
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