Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer

• Main Authors: Shaharuddin, Nur Amirah, Idrus, Sevia Mahdaliza, Isaak, Suhaila, A. Mohamed, Norliza, Yusni, N. A. A.
• Format: Article
• Language: English
• Published: Penerbit UTM 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/53301/1/SuhailaIsaak2014_Largesignalmodelofheterojunction.pdf; http://eprints.utm.my/id/eprint/53301/; http://dx.doi.org/10.11113/jt.v67.2761

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion