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Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of qu...

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Main Authors: Saeidmanesh, Mehdi, Rahmani, Meisam, Karimi, Hediyeh, Khaledian, Mohsen, Ismail, Razali
Format: Article
Published: Elsevier Ltd. 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/51851/
http://dx.doi.org/10.1016/j.microrel.2013.08.003
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spelling my.utm.518512018-10-31T12:39:09Z http://eprints.utm.my/id/eprint/51851/ Analytical model for threshold voltage of double gate bilayer graphene field effect transistors Saeidmanesh, Mehdi Rahmani, Meisam Karimi, Hediyeh Khaledian, Mohsen Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied Elsevier Ltd. 2014 Article PeerReviewed Saeidmanesh, Mehdi and Rahmani, Meisam and Karimi, Hediyeh and Khaledian, Mohsen and Ismail, Razali (2014) Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. Microelectronics Reliability, 54 (1). pp. 44-48. ISSN 0026-2714 http://dx.doi.org/10.1016/j.microrel.2013.08.003
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Saeidmanesh, Mehdi
Rahmani, Meisam
Karimi, Hediyeh
Khaledian, Mohsen
Ismail, Razali
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
description A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied
format Article
author Saeidmanesh, Mehdi
Rahmani, Meisam
Karimi, Hediyeh
Khaledian, Mohsen
Ismail, Razali
author_facet Saeidmanesh, Mehdi
Rahmani, Meisam
Karimi, Hediyeh
Khaledian, Mohsen
Ismail, Razali
author_sort Saeidmanesh, Mehdi
title Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
title_short Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
title_full Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
title_fullStr Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
title_full_unstemmed Analytical model for threshold voltage of double gate bilayer graphene field effect transistors
title_sort analytical model for threshold voltage of double gate bilayer graphene field effect transistors
publisher Elsevier Ltd.
publishDate 2014
url http://eprints.utm.my/id/eprint/51851/
http://dx.doi.org/10.1016/j.microrel.2013.08.003
_version_ 1643653080490704896
score 13.160551

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