Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor

• Main Author: Hamzah, Muhammad Afiq Nurudin
• Format: Thesis
• Language: English
• Published: 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf; http://eprints.utm.my/id/eprint/50698/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:92100

For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and relia...