Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon

• Main Authors: Jawada, M. J., Hashima, M. R., Al Obaidi, Nihad K. Ali
• Format: Article
• Published: ECS - The Electrochemical Society 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/29424/; http://dx.doi.org/10.1149/1.3516605

We present a method to synthesize submicrometer germanium dioxide (GeO2) on porous silicon (PS) by electrochemical deposition. The PS was electrochemically prepared in HF based electrolyte. GeCl4 was directly hydrolyzed by hydrogen peroxide to produce pure GeO2 and then electrochemically deposited on PS. The scanning electron microscopy results showed that the GeO2 structures are uniform in shape with diameter ∼500 nm. The photoluminescence spectrum showed a prominent peak related to GeO2 at about 400 nm. The results indicated potential applications of GeO2 on the silicon based substrate for future optoelectronic nanodevices in the visible region using a simple fabrication method.