RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

• Main Authors: Mustafa, Farahiyah, Parimon, Norfarariyanti, Hashim, Abdul Manaf, Abd. Rahman, Shaharin Fadzli, Abdul Rahman, Abdul Rahim, Osman, Mohd. Nizam
• Format: Article
• Published: Springer Berlin / Heidelberg 2010
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/26551/; http://dx.doi.org/10.1007/s00542-010-1099-4

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.