Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rate...
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| Format: | Article |
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Asian Network for Scientific Information
2008
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| Online Access: | http://eprints.utm.my/id/eprint/25919/ http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf |
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