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Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering

Thin films of amorphous silicon-carbon alloy (a-Si:C:H) were prepared by RF magnetron sputtering onto glass substrates maintained at room temperature. Aluminium (Al) electrodes were provided by thermal evaporation to form sandwich structures. The amorphous state of the films was confirmed by XRD ana...

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Main Authors: Lau, Chen Chen, Ismai, B., Muhammad, R., Yusuf, M. N.
Format: Conference or Workshop Item
Language:English
Published: 2004
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Online Access:http://eprints.utm.my/id/eprint/20810/1/RMuhammad2004_ElectronicConductionProcessInAmorphous.pdf
http://eprints.utm.my/id/eprint/20810/
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spelling my.utm.208102017-10-11T01:31:29Z http://eprints.utm.my/id/eprint/20810/ Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering Lau, Chen Chen Ismai, B. Muhammad, R. Yusuf, M. N. Unspecified Thin films of amorphous silicon-carbon alloy (a-Si:C:H) were prepared by RF magnetron sputtering onto glass substrates maintained at room temperature. Aluminium (Al) electrodes were provided by thermal evaporation to form sandwich structures. The amorphous state of the films was confirmed by XRD analysis and their constituent was checked using FT-IR SystemSpectrum machine. Capacitance measurements indicate that the films have a relative permittivity value of 6.93. A detailed study of dark current-voltage (I-V) characteristics clearly reveals the conduction mechanism as ohmic at low voltages and that of trap limited space charge limited conduction (SCLC) at higher voltages. Further evidence for space-charge-limited conduction process is provided by a linear dependence of log I on log d, log Vx on log d and log VTFL on log d. The trap density is found in the order of 1021 m-3. 2004 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/20810/1/RMuhammad2004_ElectronicConductionProcessInAmorphous.pdf Lau, Chen Chen and Ismai, B. and Muhammad, R. and Yusuf, M. N. (2004) Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering. In: Regional Conference and Workshop on Solid State Science and Technology, 2004.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic Unspecified
spellingShingle Unspecified
Lau, Chen Chen
Ismai, B.
Muhammad, R.
Yusuf, M. N.
Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
description Thin films of amorphous silicon-carbon alloy (a-Si:C:H) were prepared by RF magnetron sputtering onto glass substrates maintained at room temperature. Aluminium (Al) electrodes were provided by thermal evaporation to form sandwich structures. The amorphous state of the films was confirmed by XRD analysis and their constituent was checked using FT-IR SystemSpectrum machine. Capacitance measurements indicate that the films have a relative permittivity value of 6.93. A detailed study of dark current-voltage (I-V) characteristics clearly reveals the conduction mechanism as ohmic at low voltages and that of trap limited space charge limited conduction (SCLC) at higher voltages. Further evidence for space-charge-limited conduction process is provided by a linear dependence of log I on log d, log Vx on log d and log VTFL on log d. The trap density is found in the order of 1021 m-3.
format Conference or Workshop Item
author Lau, Chen Chen
Ismai, B.
Muhammad, R.
Yusuf, M. N.
author_facet Lau, Chen Chen
Ismai, B.
Muhammad, R.
Yusuf, M. N.
author_sort Lau, Chen Chen
title Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
title_short Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
title_full Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
title_fullStr Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
title_full_unstemmed Electronic conduction processes in amorphous silicon-carbon thin films prepared by RF magnetron sputtering
title_sort electronic conduction processes in amorphous silicon-carbon thin films prepared by rf magnetron sputtering
publishDate 2004
url http://eprints.utm.my/id/eprint/20810/1/RMuhammad2004_ElectronicConductionProcessInAmorphous.pdf
http://eprints.utm.my/id/eprint/20810/
_version_ 1643647238101008384
score 13.18916

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