Formation of self-assembled Ge islands on Si (100) using magnetron sputtering and subsequent rapid thermal annealing
Formation of Ge island after an ex-situ thermal annealing of Ge-rich film on Si (100) were investigated. Ge film was deposited using radio-frequency magnetron sputtering with the substrate being at room temperature. The film was then thermal annealed at an elevated temperature using a rapid thermal...
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Main Authors: | , , , |
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Format: | Conference or Workshop Item |
Published: |
2009
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/15208/ |
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