Formation of self-assembled Ge islands on Si (100) using magnetron sputtering and subsequent rapid thermal annealing

Formation of Ge island after an ex-situ thermal annealing of Ge-rich film on Si (100) were investigated. Ge film was deposited using radio-frequency magnetron sputtering with the substrate being at room temperature. The film was then thermal annealed at an elevated temperature using a rapid thermal...

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Bibliographic Details
Main Authors: Ameruddin, Amira Saryati, Othaman, Zulkafli, Aryanto, Didik, Ismail, Abd. Khamim
Format: Conference or Workshop Item
Published: 2009
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Online Access:http://eprints.utm.my/id/eprint/15208/
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