Fabrication & characterization of n-AlGaAs/GaAS schottky diode for rectenna device application

• Main Authors: Parimon, Norfarariyanti, Mustafa, Farahiyah, Hashim, Abdul Manaf, Abdul Aziz, Azlan
• Format: Conference or Workshop Item
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/15175/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:77287

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps us...