Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/14418/ |
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