Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET

• Main Authors: Saad, Ismail, Ismail, Razali, Arora, Vijay
• Format: Conference or Workshop Item
• Published: 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/14144/

A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel lengt...