Effect of excess silicon concentration on the structural and optical characteristics of silicon nanocrystals embedded in silicon oxide
Silicon (Si) nanocrystals embedded in Si oxide matrix have been formed by rapid thermal annealing of sub-stoichiometric Si oxide films (SiOx with x < 2). The SiOx films were deposited by co-sputtering of Si oxide and Si target using magnetron RF sputtering technique. The Si-to-SiO2 ratio was cont...
保存先:
主要な著者: | , , |
---|---|
フォーマット: | Conference or Workshop Item |
出版事項: |
2007
|
主題: | |
オンライン・アクセス: | http://eprints.utm.my/id/eprint/13939/ |
タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|