Analysis and simulation of carriers statistic for semiconducting single wall carbon nanotube

• Main Authors: Ismail, Razali, Karamdel, Javad, Ahmadi, M. Taghi, Damghanian, Mitra, Majlis, Burhanuddin Yeop M., Dee, ChangFu
• Format: Article
• Published: Matrice Technology Ltd. 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13055/; http://dx.doi.org/10.1179/143307509X440325

In scaling down to 10 nm, the electron transportation is predominantly ballistic. Moreover, in most of the doped nanoscale devices, the carrier density is in the degenerate regime. In these cases the failure of Boltzmann statistic has led the research to new explanations. In this paper the authors f...