Performance comparison of CMOS and NMOS GNRFET full adder

Transistor makes up the cornerstone of modern computing. In this work, a SPICE model of GNRFET was used to simulate the performance of a NMOS and CMOS binary full adder. The performance of this adder was evaluated in terms of its average power consumption and propagation delay. Three variables, name...

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Main Authors: Tan, Zheng Hong, M. Rasol, M. Faidzal, Johari, Zaharah, Hamzah, Afiq, Tan, Michael Loong Peng, Mohamed Sultan, Suhana, Alias, Nurul Ezaila, Isaak, Suhaila, Yusoff, Yusmeeraz
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Language:English
Published: Penerbit UTM Press 2022
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Online Access:http://eprints.utm.my/104829/1/SuhailaIsaak2022_PerformanceComparisonofCMOSandNMOSGNRFET.pdf
http://eprints.utm.my/104829/
http://dx.doi.org/10.11113/elektrika.v21n2.347
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spelling my.utm.1048292024-03-25T08:49:53Z http://eprints.utm.my/104829/ Performance comparison of CMOS and NMOS GNRFET full adder Tan, Zheng Hong M. Rasol, M. Faidzal Johari, Zaharah Hamzah, Afiq Tan, Michael Loong Peng Mohamed Sultan, Suhana Alias, Nurul Ezaila Isaak, Suhaila Yusoff, Yusmeeraz TK Electrical engineering. Electronics Nuclear engineering Transistor makes up the cornerstone of modern computing. In this work, a SPICE model of GNRFET was used to simulate the performance of a NMOS and CMOS binary full adder. The performance of this adder was evaluated in terms of its average power consumption and propagation delay. Three variables, namely the resistance value, dimer lines and channel length were manipulated and the impact on its performance was assessed. It was observed that a linear improvement in propagation delay was accompanied by an exponential increase in power consumption and only a small range of values of resistance was able to deliver a relatively reasonable trade-off between power consumption and propagation delay. These values range from approximately 110 kΩ to 130 kΩ. When the dimer lines were varied from 12 to 8 and channel length was varied from 32 nm to 16 nm, the results showed that a channel length of 16 nm was superior to that of a channel length of 32 nm as it showed 25.25 % of improvement in propagation delay at approximately similar power consumption. On the other hand, the choice of dimer lines and circuit architecture was required to be evaluated on a case-by-case basis. For a compute-intensive application with a controlled environment, NMOS logic with 8 dimer lines should be chosen, while for less compute-intensive applications and portable devices, CMOS logic with 12 dimer lines should be utilised. A NMOS logic was chosen for the former due to a reasonable trade-off of 30.94 % of power consumption for a 35.03 % of propagation delay was established When the performance of these full adders are compared to that of a MTGB based ternary gate in terms of their performance, it was found that the CMOS and NMOS logic full adder performed better than a MTGB based ternary full adder. Penerbit UTM Press 2022 Article PeerReviewed application/pdf en http://eprints.utm.my/104829/1/SuhailaIsaak2022_PerformanceComparisonofCMOSandNMOSGNRFET.pdf Tan, Zheng Hong and M. Rasol, M. Faidzal and Johari, Zaharah and Hamzah, Afiq and Tan, Michael Loong Peng and Mohamed Sultan, Suhana and Alias, Nurul Ezaila and Isaak, Suhaila and Yusoff, Yusmeeraz (2022) Performance comparison of CMOS and NMOS GNRFET full adder. ELEKTRIKA- Journal of Electrical Engineering, 21 (2). pp. 7-10. ISSN 0128-4428 http://dx.doi.org/10.11113/elektrika.v21n2.347 DOI : 10.11113/elektrika.v21n2.347
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Tan, Zheng Hong
M. Rasol, M. Faidzal
Johari, Zaharah
Hamzah, Afiq
Tan, Michael Loong Peng
Mohamed Sultan, Suhana
Alias, Nurul Ezaila
Isaak, Suhaila
Yusoff, Yusmeeraz
Performance comparison of CMOS and NMOS GNRFET full adder
description Transistor makes up the cornerstone of modern computing. In this work, a SPICE model of GNRFET was used to simulate the performance of a NMOS and CMOS binary full adder. The performance of this adder was evaluated in terms of its average power consumption and propagation delay. Three variables, namely the resistance value, dimer lines and channel length were manipulated and the impact on its performance was assessed. It was observed that a linear improvement in propagation delay was accompanied by an exponential increase in power consumption and only a small range of values of resistance was able to deliver a relatively reasonable trade-off between power consumption and propagation delay. These values range from approximately 110 kΩ to 130 kΩ. When the dimer lines were varied from 12 to 8 and channel length was varied from 32 nm to 16 nm, the results showed that a channel length of 16 nm was superior to that of a channel length of 32 nm as it showed 25.25 % of improvement in propagation delay at approximately similar power consumption. On the other hand, the choice of dimer lines and circuit architecture was required to be evaluated on a case-by-case basis. For a compute-intensive application with a controlled environment, NMOS logic with 8 dimer lines should be chosen, while for less compute-intensive applications and portable devices, CMOS logic with 12 dimer lines should be utilised. A NMOS logic was chosen for the former due to a reasonable trade-off of 30.94 % of power consumption for a 35.03 % of propagation delay was established When the performance of these full adders are compared to that of a MTGB based ternary gate in terms of their performance, it was found that the CMOS and NMOS logic full adder performed better than a MTGB based ternary full adder.
format Article
author Tan, Zheng Hong
M. Rasol, M. Faidzal
Johari, Zaharah
Hamzah, Afiq
Tan, Michael Loong Peng
Mohamed Sultan, Suhana
Alias, Nurul Ezaila
Isaak, Suhaila
Yusoff, Yusmeeraz
author_facet Tan, Zheng Hong
M. Rasol, M. Faidzal
Johari, Zaharah
Hamzah, Afiq
Tan, Michael Loong Peng
Mohamed Sultan, Suhana
Alias, Nurul Ezaila
Isaak, Suhaila
Yusoff, Yusmeeraz
author_sort Tan, Zheng Hong
title Performance comparison of CMOS and NMOS GNRFET full adder
title_short Performance comparison of CMOS and NMOS GNRFET full adder
title_full Performance comparison of CMOS and NMOS GNRFET full adder
title_fullStr Performance comparison of CMOS and NMOS GNRFET full adder
title_full_unstemmed Performance comparison of CMOS and NMOS GNRFET full adder
title_sort performance comparison of cmos and nmos gnrfet full adder
publisher Penerbit UTM Press
publishDate 2022
url http://eprints.utm.my/104829/1/SuhailaIsaak2022_PerformanceComparisonofCMOSandNMOSGNRFET.pdf
http://eprints.utm.my/104829/
http://dx.doi.org/10.11113/elektrika.v21n2.347
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score 13.188404