Effects of post-annealing on GaN thin films growth using RF magnetron sputtering

• Main Authors: Othman, N. A., Nayan, N., Mustafa, M. K., Bakri, A. S., Azman, Z., Raship, N. A., Hasnan, M. M. I. M., Mamat, M. H., Yusop, M. Z. M., Bakar, A. S. A., Ahmad, M. Y.
• Format: Article
• Published: Inderscience Publishers 2022
• Subjects: QD Chemistry
• Online Access: http://eprints.utm.my/id/eprint/101369/; http://dx.doi.org/10.1504/IJNT.2022.124511

Radio-frequency (RF) magnetron sputtering is one of the methods to deposit thin films that have been widely used in the deposition of GaN thin films to fabricate optoelectronic devices. However, the crystallisation of the GaN films deposited using RF magnetron sputtering at room temperature shows Ga...