Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation

• Main Authors: Othman, A.R, Ibrahim , A.B, Husain, M.N, Johal , M.S, A.Rashid , K.A, Saad, M.M
• Format: Conference or Workshop Item
• Language: English
• Published: 2012
• Subjects: Q Science (General)
• Online Access: http://eprints.utem.edu.my/id/eprint/6821/1/1569634165.pdf; http://eprints.utem.edu.my/id/eprint/6821/; http://www.utem.edu.my/apace2012/index.php?option=com_content&view=article&id=26&Itemid=25

This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.