Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation
This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedanc...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/6821/1/1569634165.pdf http://eprints.utem.edu.my/id/eprint/6821/ http://www.utem.edu.my/apace2012/index.php?option=com_content&view=article&id=26&Itemid=25 |
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| Summary: | This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc. |
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