Work-function tuning on analogue properties of junction-less strained DG-MOSFET

This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking...

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Bibliographic Details
Main Authors: Salehuddin, Fauziyah, Kaharudin, Khairil Ezwan, Mohd Zain, Anis Suhaila
Format: Article
Language:English
Published: Taylor's University 2023
Online Access:http://eprints.utem.edu.my/id/eprint/27323/2/0019928122023615.PDF
http://eprints.utem.edu.my/id/eprint/27323/
https://jestec.taylors.edu.my/Vol%2018%20Issue%201%20February%20%202023/18_1_22.pdf
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